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    Nonvolatile control of nonlinear Hall and circular photogalvanic effects via Berry curvature dipole in multiferroic monolayer CrNBr2

    Wenzhe Zhou1, Yinheng Li1, Dehe Zhang1, Guibo Zheng1, and Fangping Ouyang1,2,3,*

    • 1School of Physics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, People's Republic of China
    • 2School of Physics and Technology, Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830046, People's Republic of China
    • 3State Key Laboratory of Powder Metallurgy, and Powder Metallurgy Research Institute, Central South University, Changsha 410083, People's Republic of China

    • *Contact author: ouyangfp06@tsinghua.org.cn

    Phys. Rev. B 113, 195126 – Published 18 May, 2026

    DOI: https://doi.org/10.1103/43bn-1d17

    Abstract

    The Berry curvature dipole induced by symmetry breaking plays a pivotal role in electronic transport properties and nonlinear responses, such as the nonlinear Hall effect and circular photogalvanic effect. The study of the Berry curvature dipole is often explored in time-reversal symmetric systems, but it should not be limited to such materials. Here, we predicted that the ferroelectricity in monolayer CrNBr2 produces the Berry curvature dipole, leading to the nonlinear Hall effect and circular photogalvanic current. The linear anomalous Hall effect and circularly polarized optical absorption, governed by spin-orbit coupling, are independent of ferroelectric polarization and exhibit extremely small conductance. In contrast, multiferroic monolayer CrNBr2 achieves a large nonlinear Hall conductivity (∼1e3/ℏeV−1 at 30 K) and circular photogalvanic current, despite its suppression at high temperatures from phonon scattering. The coupling between the ferroelectric polarization and the Berry curvature dipoles (intraband for nonlinear Hall conductance and interband for circular photogalvanic current) allows for nonvolatile switching of these effects, presenting substantial promise for nanoelectronic and optoelectronic devices.

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