Graphene has emerged as a paradigmatic material in condensed matter physics due to its exceptional electronic, mechanical, and thermal properties. A deep understanding of its thermoelectric transport behavior is crucial for the development of novel nanoelectronic and energy-harvesting devices. In this work, we investigate the thermoelectric transport properties of monolayer graphene subjected to randomly distributed localized strain fields, which locally induce impurity-like perturbations. These strain-induced impurities are modeled via 2D Dirac oscillators, capturing the coupling between pseudorelativistic charge carriers and localized distortions in the lattice. Employing the semiclassical Boltzmann transport formalism, we compute the relaxation time using a scattering approach tailored to the Dirac oscillator potential. From this framework, we derive analytical expressions for the electrical conductivity, Seebeck coefficient, and thermal conductivity. The temperature dependence of the scattering centers density is also investigated. Our results reveal how strain modulates transport coefficients, highlighting the interplay between mechanical deformations and thermoelectric performance in graphene. This study provides a theoretical foundation for strain engineering in thermoelectric graphene-based devices.

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• Defects
• Electrical conductivity
• Thermal conductivity
• Thermoelectric effects
• Graphene
• Tight-binding model