Switching of perpendicular magnetization by spin-orbit torque underpins the next-generation spintronic technologies, particularly for nonvolatile, ultrafast, and energy-efficient data storage devices. However, the technology has been facing two major challenges, the necessity of a bias magnetic field and the very high switching current density of about ${10}^6-{10}^7\mathrm{A}\mathrm{c}{\mathrm{m}}^{-2}$, which lead to complex device structure, reduced lifetime and high energy consumption. Here, we demonstrate highly efficient field-free switching of perpendicular magnetization with ultra-low current at room temperature using ${\mathrm{Fe}}_3{\mathrm{GaTe}}_2/{\mathrm{WTe}}_2/{\mathrm{CuO}}_{\mathrm{x}}$ heterostructures. The out-of-plane anti-damping torque generated by the ultrathin ${\mathrm{WTe}}_2$ layer eliminates the need for a bias magnetic field. And the significantly enhanced spin current originating from the ${\mathrm{WTe}}_2/{\mathrm{CuO}}_{\mathrm{x}}$ interface leads to a ultra-low switching current density of merely $3.6\times {10}^5\mathrm{A}\mathrm{c}{\mathrm{m}}^{-2}$, significantly lower than the lowest reported value. These findings open a new paradigm in the design of all-electric, low-power spintronic devices.

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• Magnetization switching
• Spin-orbit torque
• Interfaces
• van der Waals systems
• Hall bar