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    Isotropic and anisotropic spin-dependent transport in epitaxial Fe3Si

    Nozomi Soya1, Michihiro Yamada2,3,4, Kohei Hamaya2,5, and Kazuya Ando1,6,7,*

    • *Contact author: ando@appi.keio.ac.jp

    Phys. Rev. B 112, 134417 – Published 9 October, 2025

    DOI: https://doi.org/10.1103/3fss-8m7c

    Abstract

    We investigate spin-dependent transport phenomena in epitaxially grown Fe3Si films, focusing on the anisotropic magnetoresistance (AMR), planar Hall effect (PHE), anomalous Hall effect (AHE), and spin Hall effect (SHE). While the sign and magnitude of the AMR and PHE depend on the current orientation relative to the crystallographic axes, the AHE and SHE remain nearly independent of the current orientation. The current orientation dependence of the AMR and PHE is consistent with the phenomenological theory of galvanomagnetic effects, where the resistivity tensor can be expanded in terms of magnetization components with coefficients determined by crystal symmetry. These findings suggest the distinct interplay between symmetry, band structure, and magnetization in the spin-dependent transport phenomena.

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