Quantum anomalous Hall (QAH) insulators exhibit chiral dissipationless edge states without an external magnetic field, making them a promising material for quantum metrology and microwave applications. However, the breakdown of the zero-resistance state at low currents hinders progress. We investigate and characterize this breakdown under microwave fields (1–25 GHz) by measuring the increase of longitudinal resistance in RF Hall bars and RF Corbino devices made from V-doped ${\left(\mathrm{Bi},\mathrm{Sb}\right)}_2{\mathrm{Te}}_3$ films. Our results point to the role of heating of electron-hole puddles under microwave irradiation, thereby fostering hopping transport. Our work offers insights critical for GHz-range QAH applications.

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• Charge dynamics
• Edge states
• Transport phenomena
• Topological materials
• Microwave techniques