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    Electrically reversible layer-tensor responses in bilayers

    Zehou Li1, Shenda He2, Pan Zhou3,*, Baoru Pan3, Rui Tan1,†, and Lizhong Sun3,‡

    • *Contact author: zhoupan71234@xtu.edu.cn
    • †Contact author: rtan@hynu.edu.cn
    • ‡Contact author: lzsun@xtu.edu.cn

    Phys. Rev. B 114, 295402 – Published 5 November, 2026

    DOI: https://doi.org/10.1103/2zmv-g9md

    Abstract

    The layer Hall effect provides a prototypical example of a hidden layer response in van der Waals bilayers: opposite layers carry compensating Hall currents at zero out-of-plane electric field, while an applied out-of-plane electric field Ez selects one layer over the other and switches the net Hall response. Here we show that this field-switching mechanism is not restricted to Hall transport, but follows from a general symmetry principle for response tensors. We formulate a selection rule for the layer-tensor effect (LTE) using Jahn symbols. For a tensor with Jahn symbol J and rank r, the stacking operation that exchanges the two layers acts as a coset representative relating the +Ez and −Ez states. Tensor components that are odd under this operation are forced to cancel between layers at Ez=0, and acquire a macroscopic response satisfying Tα(+Ez)=−Tα(−Ez). This criterion allows us to enumerate the symmetry-allowed electrically reversible tensor components associated with different Jahn symbols and to identify their physical realizations in common response tensors. We apply the theory to representative anomalous Hall, shift-current, nonlinear Drude, piezoelectric, spin Hall, and spin-photocurrent channels. Model calculations and first-principles simulations further confirm the predicted field-odd responses. Our results establish an electrically switchable LTE framework, providing a unified route to multifunctional layertronic responses in bilayer materials.

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