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    Origin of ferromagnetism in a two-dimensional dilute magnetic semiconductor h−CoxZn1−xO

    Shashank Chaturvedi and Umesh V. Waghmare*

    • *Contact author: waghmare@jncasr.ac.in

    Phys. Rev. B 112, 094437 – Published 18 September, 2025

    DOI: https://doi.org/10.1103/2tcq-jqvw

    Abstract

    We present a theoretical analysis of the origin of ferromagnetism in two-dimensional Co-substituted h-ZnO (h−CoxZn1−xO) observed experimentally at room temperature within a narrow window of Co concentration (x≈0.12). A combination of first-principles calculations and site-occupancy disorder technique extended to include spin disorder of a large number of configurations reveals that (a) ferromagnetic (FM) and ferrimagnetic states are thermodynamically stable at x=0.12 at the experimental annealing temperature of 400∘C and (b) FM order weakens with slight increase in x. The low-energy landscape is dominated by configurations with Co atoms at second-nearest-neighbor sites on the Zn sublattice exhibiting FM coupling, while higher energy configurations with Co atoms at first- and third-nearest-neighbor sites exhibit antiferromagnetic coupling. Electronic structure of the most stable FM configuration is gapped.

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