Origin of ferromagnetism in a two-dimensional dilute magnetic semiconductor
Phys. Rev. B 112, 094437 – Published 18 September, 2025
DOI: https://doi.org/10.1103/2tcq-jqvw
Abstract
We present a theoretical analysis of the origin of ferromagnetism in two-dimensional Co-substituted -ZnO () observed experimentally at room temperature within a narrow window of Co concentration (). A combination of first-principles calculations and site-occupancy disorder technique extended to include spin disorder of a large number of configurations reveals that (a) ferromagnetic (FM) and ferrimagnetic states are thermodynamically stable at at the experimental annealing temperature of and (b) FM order weakens with slight increase in . The low-energy landscape is dominated by configurations with Co atoms at second-nearest-neighbor sites on the Zn sublattice exhibiting FM coupling, while higher energy configurations with Co atoms at first- and third-nearest-neighbor sites exhibit antiferromagnetic coupling. Electronic structure of the most stable FM configuration is gapped.