Tuning the low-energy band structure in twisted bilayer <math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mi>WSe</mi><mn>2</mn></msub></math>

T.-H.-Y. Vu; O. J. Clark; N. H. Jo; J. Blyth; Q. Li; C. Jozwiak; A. Bostwick; J. B. Muir; L. Jia; J. A. Davis; I. Di Bernardo; A. Grubišić-Čabo; K. Xing; W. Zhao; S. H. Ryu; S. H. Lee; Z. Mao; K. Watanabe; T. Taniguchi; B. A. Chambers; S. L. Harmer; E. Rotenberg; M. S. Fuhrer; M. T. Edmonds

doi:10.1103/2hwx-5bg8

Letter

Tuning the low-energy band structure in twisted bilayer ${WSe}_{2}$

T.-H.-Y. Vu^1,*, O. J. Clark ^1,*, N. H. Jo ², J. Blyth ¹, Q. Li¹, C. Jozwiak ², A. Bostwick², J. B. Muir^3,4, L. Jia ^3,4 et al.

J. A. Davis ^3,4, I. Di Bernardo ^1,5, A. Grubišić-Čabo ⁶, K. Xing ¹, W. Zhao^7,8, S. H. Ryu², S. H. Lee^9,10, Z. Mao^9,10, K. Watanabe ¹¹, T. Taniguchi ¹², B. A. Chambers¹³, S. L. Harmer^13,14, E. Rotenberg², M. S. Fuhrer ^1,8, and M. T. Edmonds ^1,8,15,†

¹School of Physics and Astronomy, Monash University, Clayton, Victoria, Australia
²Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
³Optical Sciences Centre, Swinburne University of Technology, Hawthorn, 3122 Victoria, Australia
⁴ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Swinburne University of Technology, Hawthorn, 3122 Victoria, Australia
⁵Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid 28049, Spain
⁶Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, 9747 AG Groningen, The Netherlands
⁷Department of Materials Science and Engineering, Monash University, Clayton VIC 3800, Australia
⁸ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria, Australia
⁹Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
¹⁰2D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA
¹¹Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
¹²Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
¹³Flinders Microscopy and Microanalysis, Flinders University, Bedford Park, South Australia 5042, Australia
¹⁴Institute for Nanoscale Science and Technology, Flinders University, Bedford Park, South Australia 5042, Australia
¹⁵ANFF-VIC Technology Fellow, Melbourne Centre for Nanofabrication, Victorian Node of the Australian National Fabrication Facility, Clayton, Victoria 3168, Australia

^*These two authors contributed equally in this work.
^†Contact author: mark.edmonds@monash.edu

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Phys. Rev. B 112, L161117 – Published 14 October, 2025

DOI: https://doi.org/10.1103/2hwx-5bg8

Abstract

Tuning the electronic structures of two-dimensional (2D) material-based heterostructures is of crucial importance for their use in functional next-generation electronics. Here, through angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nano-ARPES), we systematically track the evolution of the near-Fermi-level electronic structure of bilayer ${WSe}_{2}$ over a large range of twist angle. While the momentum positioning of the valence-band maxima (VBM) is independent of twist angle, we find that the energetic separation between the hole bands at the $K$ point of the Brillouin zone and the higher binding-energy hole band at $Γ$ can be varied in excess of 100 meV. We explore the mechanisms underpinning this evolution and discuss the implications for tuning both the size of the band gaps, and the efficiency of the spin-dependent electron-phonon coupling channels in homobilayer transition-metal dichalcogenide devices.

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Tuning the low-energy band structure in twisted bilayer ${WSe}_{2}$

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Tuning the low-energy band structure in twisted bilayer WSe2

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Tuning the low-energy band structure in twisted bilayer ${WSe}_{2}$