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    Transition metal dichalcogenide excitons in periodic electrostatic potentials: Center-of-mass models

    Jose M. Torres-López1,*, S. Kundu2, Felipe H. da Jornada3, Tony Heinz3, and Allan H. MacDonald1

    • 1Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA
    • 2Department of Materials Science and Metallurgy, 27 Charles Babbage Road Cambridge CB3 0FS, United Kingdom
    • 3Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

    • *Contact author: josetorres@my.utexas.edu

    Phys. Rev. B 114, 165302 – Published 15 September, 2026

    DOI: https://doi.org/10.1103/2cy4-6334

    Abstract

    Two-dimensional (2D) van der Waals materials are a promising platform for exciton state engineering. In this paper, we study the properties of excitons in 2D group VI transition metal dichalcogenide semiconductors that are modified by a periodic electrostatic potential through the quadratic Stark effect. Using a model that retains only center-of-mass and valley degrees of freedom, we find that electrostatic potentials can drive optical valley splitting up to ∼10meV and induce valley-selective exciton dispersion. We explain why both properties are sensitive to the rotational symmetry of the electrostatic trapping potential using a combination of numerical results and analytical approximations. An important consequence of valley splitting is that the lowest exciton band is nondegenerate and has a linear dispersion around γ that is expected to suppress thermal excitations, allowing true Bose condensation and superfluidity of excitons in two space dimensions.

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