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Quantum geometry in the NbSe2 family: Obstructed compact Wannier function and perturbation theory

Jiabin Yu1,2, Yi Jiang3, Yuanfeng Xu4, Dumitru Călugăru2,5, Haoyu Hu2,3, Haojie Guo3, Sandra Sajan3, Yongsong Wang3, Miguel M. Ugeda3,6,7 et al.

Fernando De Juan3,7 and B. Andrei Bernevig2,3,7

Phys. Rev. B 114, 125104 – Published 7 August, 2026

DOI: https://doi.org/10.1103/2bjl-p1vd

Abstract

We revisit the electronic structure and band topology of monolayer 1H−NbSe2 and its related compounds 1H−MoS2, NbS2, TaS2, TaSe2, and WS2. We construct a six-band, a three-band, and—simplest of all—a single-band model for this material family, by directly Wannierizing the ab initio bands. All hosts obstructed atomic isolated bands away from the atomic positions near the Fermi energy. We find that in the three-band model, the obstructed atomic Wannier function can be well approximated by an optimally compact Wannier function with more than 90% accuracy for all the compounds, rising to a remarkable 94% accuracy in NbSe2. Interestingly, the simplest single-band model has next-nearest-neighbor hopping larger than the nearest-neighbor hopping (by nearly an order of magnitude for MoS2, NbSe2, TaSe2, and WS2), which comes from the cancellation between the atomic on-site terms and the atomic nearest-neighbor hopping after projecting to the obstructed atomic Wannier functions in the underlying three-band model. Furthermore, for NbSe2, we employ a novel approximation scheme to obtain an effective Hamiltonian that captures the three bands originating mainly from the Nb atom. We also use conventional perturbation theory to derive the ab initio obstructed Wannier function with 95% accuracy. Our results pave the way for future study of the effect of quantum geometry on the correlated phases in this family of materials.

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