Export citation

Export citation

Choose format for download:

Download Citation
  • Editors' Suggestion

Accessing dirty-regime anomalous Hall effect in pure ferromagnetic metals

Tengfei Ma1, Lingsong Huang1, Ning Jiang1, Yaoxiang Jiang1, Guixin He1, Shifeng Zhao1,3,*, Cong Wang2,†, Wenyu Xing1,3,‡, and Weibo Gao4,§

  • *Contact author: zhsf@imu.edu.cn
  • †Contact author: wangcongphysics@mail.buct.edu.cn
  • ‡Contact author: wenyuxing@imu.edu.cn
  • §Contact author: wbgao@ntu.edu.sg

Phys. Rev. B 113, 174428 – Published 19 May, 2026

DOI: https://doi.org/10.1103/26cn-khsq

Abstract

In the field of condensed matter physics, extensive efforts have been put into the exploration of the anomalous Hall effect (AHE) since the dominance of Berry phase curvature and spin-orbit-coupling-mediated scattering provides a powerful probe for topological order in quantum materials, a key pursuit for developing next-generation dissipationless spintronic devices. Nonetheless, the underlying mechanisms of the AHE in the low conductive dirty regime (longitudinal conductivity σxx<104Ω−1cm−1) remain insufficiently understood because of the difficulty in preparing pure ferromagnetic metals with low conductivity. To address this, we utilized the technology of low-energy cluster beam deposition to control the structural disorder and successfully prepared ferromagnetic nanogranular CoFe films with a low conductive metallic state, which allow us to systematically investigate the AHE of pure ferromagnetic metals in the dirty regime. Our results reveal a nonmonotonic evolution of anomalous Hall conductivity σAHE with increasing cluster size. The possible dominant mechanism is the intrinsic contribution derived from the scaling relationship between σxx and σAHE notwithstanding the presence of the extrinsic skew scattering. More importantly, σAHE not only falls within the dirty regime but also is consistent with the widely established scaling exponent of σAHE∝σxx1.6, which indicates that the degenerative AHE arises from the damping of the intrinsic contribution. In this work, we show the potential of cluster-assembled engineering in the exploration of the quantum transport properties for future electronics devices.

Physics Subject Headings (PhySH)

Authorization Required

We need you to provide your credentials before accessing this content.

References (Subscription Required)

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation