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    Valley- and spin-dependent electronic and transport properties of two-dimensional altermagnetic titanium-based chalcogenide halides

    Ruo-Yu Ning1, Zhi-Hua Yan1, Jin-Yang Li1, Yong-Kun Wang1, and Si Li1,2,3,4,*

    • 1School of Physics, Northwest University, Xi'an 710127, China
    • 2Shaanxi Key Laboratory for Theoretical Physics Frontiers, Xi'an 710127, China
    • 3Peng Huanwu Center for Fundamental Theory, Xi'an 710127, China
    • 4Fundamental Discipline Research Center for Quantum Science and Technology of Shaanxi Province, Xi'an 710127, China

    • *Contact author: sili@nwu.edu.cn

    Phys. Rev. B 114, 165117 – Published 14 September, 2026

    DOI: https://doi.org/10.1103/1qxd-f6dt

    Abstract

    Altermagnets (AMs) combine fully compensated magnetization with momentum-dependent spin splitting, yet intrinsic altermagnetic materials exhibiting exceptional valley characteristics remain scarce. Here, we identify monolayer titanium-based chalcogenide halides, Ti2X2Y (X=F, Cl, Br, I; Y = O, S, Se, Te), as a new family of two-dimensional (2D) altermagnetic valley materials. These monolayers exhibit robust d-wave altermagnetic order, semiconducting band gaps, and pronounced spin-polarized valley characteristics. We show that uniaxial strain breaks the valley degeneracy, inducing giant valley splitting together with a tunable piezomagnetic response. An in-plane electric field generates noncollinear spin currents, while spin-orbit coupling gives rise to the anomalous Hall effect, valley-selective linear dichroism, and the magneto-optical Kerr effect. These findings establish Ti2X2Y monolayers as a versatile platform for exploring spin- and valley-dependent electronic, optical, and transport phenomena in 2D altermagnets.

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