We report the intrinsic anomalous Hall effect of ${\mathrm{NdCrGe}}_3$ single crystals, which is a hexagonal ferromagnet metal with a one-dimensional crystal structure. The ${\mathrm{NdCrGe}}_3$ undergoes multimagnetic transitions with a ferromagnetic transition at $T_C\sim 101$ K and a spin reorientation transition at $\sim 55$ K. The Hall effect indicates that the dominant charge carriers shift from electrons to holes near $T_C$. Large anomalous Hall conductivity $\sim 681.8$ (600.3) ${\mathrm{\Omega }}^{-1} {\mathrm{cm}}^{-1}$ for $H//ab$ ($H//c$) is observed, consistent with the theoretically anticipated value derived from the intrinsic Berry-curvature mechanism. The linear scaling relationships observed between the anomalous Hall resistivity and the longitudinal resistivity offer strong and convincing evidence indicating that the intrinsic Karplus-Luttinger mechanism, rather than extrinsic side-jump and skew-scattering mechanisms, assumes a dominant position in the anomalous Hall effect. The distinctive crystal structure, unconventional complex magnetic interactions, and the observed intrinsic anomalous Hall effect could make ${\mathrm{NdCrGe}}_3$ as a promising candidate for future electronic devices.

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• Anomalous Hall effect
• Ferromagnetism
• Magnetoresistance
• Spin reorientation transition