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    Band-mixing effects in one-dimensional charge transfer insulators

    Samuel Milner1, Steven Johnston2,3, and A. E. Feiguin1

    Phys. Rev. B 113, 045112 – Published 6 January, 2026

    DOI: https://doi.org/10.1103/1gt7-yryn

    Abstract

    The low-energy properties of transition metal oxides (TMOs) are governed by the electrons occupying strongly correlated d-orbitals that are hybridized with surrounding ligand oxygen p orbitals to varying degrees. Their physics is thus established by a complex interplay between the transition-metal (TM)-ligand hopping t, charge transfer energy ΔCT, and on-site TM Hubbard repulsion U. Here, we study the spectral properties of a one-dimensional analog of such a pd system, with alternating TM d and ligand anion p orbitals situated along a chain. Using the density matrix renormalization group method, we study the model's single-particle spectral function, x-ray absorption spectrum, and dynamical spin structure factor as a function of ΔCT and U. In particular, we present results spanning from the Mott insulating (ΔCT>U) to negative charge transfer regime ΔCT<0 to better understand the ground-state and momentum-resolved excited-state properties of these different regimes. Our results can guide new studies on TMOs that seek to situate them within the Mott-Hubbard/charge transfer insulator classification scheme.

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