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    Relationship between anisotropic magnetoresistance and magnetocrystalline anisotropy in uniaxially textured cobalt (002) films

    Zhiyang Gao1,2,*, Junwen Sun3,4,*, Sha Zhang5, Yu Miao6, Cunxu Gao1,2, X. R. Wang3,†, and Desheng Xue1,2,‡

    • *These authors contributed equally to this work.
    • †Contact author: phxwan@ust.hk
    • ‡Contact author: xueds@lzu.edu.cn

    Phys. Rev. B 114, 074431 – Published 25 August, 2026

    DOI: https://doi.org/10.1103/1dtz-pywx

    Abstract

    Physical observables of a macrosystem are functions of state variables that uniquely define the macroscopic state. However, the explicit impact of these variables on the behaviors of magnetoresistance (MR) has not been fully explored. Here, angular-dependent MR of textured cobalt (002) films, which possess a uniaxial magnetocrystalline anisotropy (MCA) with the easy axis (z axis) perpendicular to the isotropic film plane (xy plane), is investigated experimentally and theoretically with two vector state variables: magnetization m and easy axis n of the MCA. When the current is applied along the x direction, we found that the angular-dependent MR in different measurement planes shows these distinct scattering mechanisms: it is governed solely by scattering related to m—the conventional anisotropic MR (AMR)—in the xy plane, by the electron scattering related to n in the yz plane (crystalline AMR), and by a combination of both in the xz plane. Notably, the crystalline AMR in the yz plane exhibits a form similar to that of the uniaxial MCA energy. Both the twofold and fourfold terms are independent of the film thickness, and the amplitude of the twofold term is proportional to the twofold constant of MCA. Our results provide a framework for understanding and engineering MR by harnessing the MCA constant.

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