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Quench switching of
Phys. Rev. B 112, 144401 – Published 1 October, 2025
DOI: https://doi.org/10.1103/1c81-tnzw
Abstract
We demonstrate that epitaxial thin film antiferromagnet exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in shows a stronger increase in resistivity, reaching hundreds of percent at 5 K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the Néel temperature. This confirms that the quench switching has a magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the structure are well suited for exploring and exploiting the intriguing physics of highly nonuniform magnetic states associated with the quench switching.
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