Citing Articles For: Impact of carrier-density screening on Urbach-tail energies and optical polarization in (,) quantum well systems

Measurements of Carrier Concentration, Mobility and Crystalline Properties Along the Growth Direction in MOCVD-Grown GaN-on-Sapphire by Cross-Section Raman Spectroscopy

Guang Chen, Manika Tun Nafisa, Yun-Chen Chung, Subiao Bian, Zhe Chuan Feng, Hsiang-Lin Liu, Kang Yang, Jixiong Li, Jeffrey Yiin, Gu Xu, Weijie Lu, Benjamin Klein, Ian Ferguson, and Changcai Cui

Photonics 13 888 (2026)

Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: the case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys

Aisling Power, Cara-Lena Nies, and Stefan Schulz

J. Phys.: Condens. Matter 38 215901 (2026)

Multiscale simulations of carrier transport in multi-quantum well (Al,Ga)N-based deep-UV LEDs: alloy disorder, acceptor activation, and injection efficiency

Robert Finn, Michael O’Donovan, Patricio Farrell, Thomas Koprucki, and Stefan Schulz

J. Phys. D: Appl. Phys. 59 445104 (2026)

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Impact of carrier-density screening on Urbach-tail energies and optical polarization in ( $Al$ , $Ga$ ) $N$ quantum well systems

Measurements of Carrier Concentration, Mobility and Crystalline Properties Along the Growth Direction in MOCVD-Grown GaN-on-Sapphire by Cross-Section Raman Spectroscopy

Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: the case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys

Multiscale simulations of carrier transport in multi-quantum well (Al,Ga)N-based deep-UV LEDs: alloy disorder, acceptor activation, and injection efficiency

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Articles Citing

Impact of carrier-density screening on Urbach-tail energies and optical polarization in (Al,Ga)N quantum well systems

Measurements of Carrier Concentration, Mobility and Crystalline Properties Along the Growth Direction in MOCVD-Grown GaN-on-Sapphire by Cross-Section Raman Spectroscopy

Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: the case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys

Multiscale simulations of carrier transport in multi-quantum well (Al,Ga)N-based deep-UV LEDs: alloy disorder, acceptor activation, and injection efficiency

Impact of carrier-density screening on Urbach-tail energies and optical polarization in ( $Al$ , $Ga$ ) $N$ quantum well systems