Articles Citing

Fabrication, characterization, and mechanical loading of Si/Si-Ge membranes for spin-qubit devices

Lucas Marcogliese ¹, Ouviyan Sabapathy¹, Rudolf Richter², Jhih-Sian Tu ³, Dominique Bougeard², and Lars R. Schreiber ^1,4,*

¹JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH, and RWTH Aachen University, Aachen, Germany
²Fakultät für Physik, Universität Regensburg, 93040 Regensburg, Germany
³Helmholtz Nano Facility (HNF), Forschungszentrum Jülich GmbH, Jülich, Germany
⁴ARQUE Systems GmbH, 52074 Aachen, Germany

^*Contact author: lars.schreiber@physik.rwth-aachen.de

Anisotropic modulation of the properties of two-dimensional hole gases in Ge/SiGe quantum wells by [110] uniaxial strain

Zhengshan Guo, Yixu Wang, Hongzhang Wang, Jieyin Zhang, Wendong Bian, Jiankun Li, Chenggang Yang, Jian Zeng, Jianjun Zhang, Shan Guan, Jun-Wei Luo, and Tian Pei

Phys. Rev. B 113 235307 (2026)

Optimization of Si/Si -Ge heterostructures for large and robust valley splitting in silicon qubits

Abel Thayil, Lasse Ermoneit, Lars R. Schreiber, Thomas Koprucki, and Markus Kantner

Phys. Rev. Applied 26 044012 (2026)

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Articles Citing

Fabrication, characterization, and mechanical loading of Si/Si-Ge membranes for spin-qubit devices

Anisotropic modulation of the properties of two-dimensional hole gases in Ge/SiGe quantum wells by [110] uniaxial strain

Optimization of Si/Si -Ge heterostructures for large and robust valley splitting in silicon qubits

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