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Strain-stress relationships for coherent in-plane strain in heterostructures with monoclinic crystal systems: β-(AlxGa1−x)2O3 on (h0l)β-Ga2O3 as example

Mathias Schubert1,2,3,*, Rafał Korlacki1, Sina Khayam4, Yousra Traouli1, Preston Sorensen1, Alexis Papamichail5,6, and Vanya Darakchieva2,5,6,†

  • 1Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
  • 2Terahertz Materials Analysis Center and Competence Center for III-N Technology, C3NiT—Janzèn, NanoLund and Solid State Physics, Lund University, 22100 Lund, Sweden
  • 3Wallenberg Initiative Materials Science for Sustainability (WISE), Department of Physics, Lund University, 22100, Lund, Sweden
  • 4Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
  • 5Competence Center for III-N Technology, C3NiT—Janzèn, Department of Physics, Chemistry and Biology (IFM), Linköping University, 58183 Linköping, Sweden
  • 6Wallenberg Initiative Materials Science for Sustainability (WISE), Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping, Sweden

β-Ga2O3 -based heterojunctions: Effects of growth orientation and alloying on electronic properties

Mohamed Abdelilah Fadla, Khushabu Agrawal, Paolo La Torraca, Myrta Grüning, Karim Cherkaoui, and Lorenzo Stella

Phys. Rev. Applied 26 014046 (2026)

Evolution of the below-bandgap anisotropic refractive indices and dielectric functions of β-(AlxGa1− x)2O3 (0 < x < 0.25) determined by generalized spectroscopic ellipsometry

Preston Sorensen, Alyssa Mock, Megan Stokey, Ufuk Kilic, Akhil Mauze, Yuewei Zhang, James Speck, Zbigniew Galazka, Vanya Darakchieva, and Mathias Schubert

Applied Physics Letters 128 122104 (2026)

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