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    Nonlinear valley and spin valves in bilayer graphene

    Xin Liao1,†, Xing-Yu Liu1,†, An-Qi Wang1, Qing Yin1, Tong-Yang Zhao1, and Zhi-Min Liao1,2,*

    • 1State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
    • 2Hefei National Laboratory, Hefei 230088, China

    • *Contact author: liaozm@pku.edu.cn
    • †These authors contributed equally to this work.

    Phys. Rev. Applied 22, 054078 – Published 26 November, 2024

    DOI: https://doi.org/10.1103/PhysRevApplied.22.054078

    Abstract

    Nonlinear transport plays a vital role in probing the quantum geometry of Bloch electrons, valley chirality, and carrier scattering mechanisms. The nonlinear Hall effect, characterized by a nonlinear scaling of Hall voltage with longitudinal current, has been explored to reveal the Berry curvature and quantum metric–related physics. In this work, we extend the study of nonlinear transport to spin and valley degrees of freedom. Using bilayer graphene devices with Fe3GeTe2 contacts, we observe a second-order nonlinear spin current exhibiting spin-valve-like behavior. By tracking magnetic moment precession under an in-plane magnetic field, we identify a significantly enhanced critical magnetic field required for in-plane rotation, suggesting out-of-plane valley polarization induced by ferromagnetic proximity. These findings offer deep insights into the interplay of valley and spin in second-order nonlinear transport, opening avenues for promising device applications.

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