Energy-resolved scanning near field optical microscopy, energy-resolved electroemission microscopy and cathodoluminescence microscopy were performed on the same 4 µm region of a green multi-quantum-well nitride LED. These techniques allowed to spatially resolve radiative recombination, hot electron production due mainly to Auger-Meitner processes and V-defect position, respectively, with a spatial resolution around 100 nm. They show a strong correlation between the V-defect positions and the regions of low light emission and low Auger-Meitner electron production, indicating that V-defects sidewalls correspond to low carrier density regions. At high carrier injection of $\SI{40}{\A \cm^{-2}}$, strong hot spots appear in the electroemission maps, corresponding to spatially localized hot electron production, whose origin is still to be determined.