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    Sliding-induced vertical ferroelectricity in bilayer 1T ′-ReS2 toward high-efficiency photovoltaics

    Meng Ge1, Jianing Tan1, Degao Xu1,2, and Gang Ouyang1,3,*

    • 1Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
    • 2School of Physics and Optoelectronic Engineering, Yangtze University, Jinzhou, 434023, China
    • 3State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China

    • *Contact author: gangouy@hunnu.edu.cn

    Phys. Rev. Applied 25, 044016 – Published 7 April, 2026

    DOI: https://doi.org/10.1103/z9vt-j5yt

    Abstract

    The emergence of sliding ferroelectricity has opened new avenues for the development of two-dimensional (2D) ferroelectrics. However, the fundamental mechanisms governing sliding-induced multistate ferroelectricity and its correlation with optoelectronic properties remain poorly understood. Using first-principles calculations, we systematically explore the stable multistate ferroelectricity and photoelectric conversion properties in a van der Waals (vdW) 1T′-ReS2 bilayer with ground-state symmetry under sliding manipulation. Our results not only identify diverse and robust sliding ferroelectricity but also reveal the exceptional stability of four distinct polarization states. Notably, we demonstrate that interlayer sliding facilitates reversible polarization switching via an ultralow energy barrier. Moreover, sliding-modulated band-edge shifts and interfacial charge redistribution synergistically drive dynamic transitions between type-II and type-V band alignments during multistate switching, yielding outstanding photovoltaic performance with a theoretical power conversion efficiency of up to 23.63%. These findings establish 2D vdW 1T′-ReS2 as a promising candidate for reconfigurable multistate ferroelectrics and high-efficiency sliding-driven photovoltaics.

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