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All-armchair-edged Xenes and optically controlled enhancement-mode transistor

Jun Zheng1,2,*, Wan-Yi Jiang1, Wei Pei1, Li Ma3, Dan-Na Liu4, Chun-Lei Li5, and Wen-Long Ma2,6,†

  • *Contact author: junzheng@semi.ac.cn
  • †Contact author: wenlongma@semi.ac.cn
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Phys. Rev. Applied 24, 014058 – Published 31 July, 2025

DOI: https://doi.org/10.1103/yhrn-jj5p

Abstract

Two-dimensional semiconductors are promising candidates for next-generation electronics due to their exceptional electrical, optical, and mechanical properties. However, developing enhancement-mode transistors compatible with current semiconductor technologies remains challenging. Here, we introduce a class of two-dimensional semiconductors—all-armchair-edged Xenes—the band gaps of which can be continuously tuned by adjusting the nanoribbon width or applying uniaxial strain. We demonstrate that a single circularly polarized light field induces different band gap variations for spin-up and spin-down electrons, enabling efficient spin filtering. Tensile strain enhances edge-state interactions, significantly increasing the band gap, especially in wider nanoribbons. Based on these findings, we propose an enhancement-mode field-effect transistor controlled solely by either left- or right-circularly polarized light and connected to topological insulator leads. The transistor’s threshold parameters, breakdown voltage, and output characteristics can be tailored by adjusting its channel width. Moreover, by adjusting the intensity and chirality of the light, we can selectively generate spin-up or spin-down currents. Using computer vision techniques, we propose a method to accurately reconstruct an all-armchair-edged lattice structure from scanning tunneling microscopy images.

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References (73)

  1. International Roadmap for Devices and Systems (IRDS) 2023 Edition (2023), https://irds.ieee.org/editions/2023.
  2. J. Zhao, H. Liu, Z. Yu, R. Quhe, S. Zhou, Y. Wang, C. C. Liu, H. Zhong, N. Han, J. Lu, and Y. Yao, Rise of silicene: A competitive 2D material, Prog. Surf. Sci. 83, 24 (2016).
  3. A. Molle, J. Goldberger, M. Houssa, Y. Xu, S.-C. Zhang, and D. Akinwande, Buckled two-dimensional Xene sheets, Nat. Mater. 16, 163 (2017).
  4. F. Bechstedt, P. Gori, and O. Pulci, Beyond graphene: Clean, hydrogenated and halogenated silicene, germanene, stanene and plumbene, Prog. Surf. Sci. 96, 100615 (2021).
  5. S. Cahangirov, M. Topsakal, E. Akturk, H. Sahin, and S. Ciraci, Two- and one-dimensional honeycomb structures of silicon and germanium, Phys. Rev. Lett. 102, 236804 (2009).
  6. C. C. Liu, W. Feng, and Y. Yao, Quantum spin Hall effect in silicene and two-dimensional germanium, Phys. Rev. Lett. 107, 076802 (2011).
  7. M. Z. Hasan and C. L. Kane, Colloquium: Topological insulators, Rev. Mod. Phys. 82, 3045 (2010).
  8. X. L. Qi and S. C. Zhang, Topological insulators and superconductors, Rev. Mod. Phys. 83, 1057 (2011).
  9. C. L. Kane and E. J. Mele, Quantum spin Hall effect in graphene, Phys. Rev. Lett. 95, 226801 (2015).
  10. Q. Yan, H. Li, H. Jiang, Q. F. Sun, and X. C. Xie, Rules for dissipationless topotronics, Sci. Adv. 10, eado4756 (2024).
  11. T. M. Philip, M. R. Hirsbrunner, M. J. Park, and M. J. Gilbert, Performance of topological insulator interconnects, IEEE Electron Device Lett. 38, 138 (2016).
  12. M. J. Gilbert, Topological electronics, Commun. Phys. 4, 70 (2021).
  13. K. H. Jin, W. Jiang, G. Sethi, and F. Liu, Topological quantum devices: A review, Nanoscale 15, 12787 (2023).
  14. B. Weber, M. S. Fuhrer, X. L. Sheng, S. A. Yang, R. Thomale, S. Shamim, Laurens W. Molenkamp, David Cobden, Dmytro Pesin, and Harold J. W. Zandvliet, 2024 roadmap on 2D topological insulators, J. Phys. Mater. 7, 022501 (2024).
  15. S. Balendhran, S. Walia, H. Nili, S. Sriram, and M. Bhaskaran, Elemental analogues of graphene: Silicene, germanene, stanene and phosphorene, Small 11, 640 (2015).
  16. M. Ezawa, Monolayer topological insulators: Silicene, germanene, and stanene, J. Phys. Soc. Jpn. 84, 121003 (2015).
  17. P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. Le Lay, Silicene: Compelling experimental evidence for graphenelike two-dimensional silicon, Phys. Rev. Lett. 108, 155501 (2012).
  18. B. Feng, Z. Ding, S. Meng, Y. Yao, X. He, P. Cheng, L. Chen, and K. Wu, Evidence of silicene in honeycomb structures of silicon on Ag(111), Nano Lett. 12, 3507 (2012).
  19. K. Yuhara, Y. Fujii, K. Nishino, N. Isobe, M. Nakatake, L. Xian, A. Rubio, and G. Le Lay, Large area planar stanene epitaxially grown on Ag (111), 2D Mater. 5, 025002 (2018).
  20. L. Meng, Y. L. Wang, L. Z. Zhang, S. X. Du, R. T. Wu, L. F. Li, Y. Zhang, G. Li, H. T. Zhou, W. A. Hofer, and H. J. Gao, Buckled silicene formation on Ir (111), Nano Lett. 13, 685 (2013).
  21. G. Bihlmayer, J. Sassmannshausen, A. Kubetzka, S. Blügel, K. von Bergmann, and R. Wiesendanger, Plumbene on a magnetic substrate: A combined scanning tunneling microscopy and density functional theory study, Phys. Rev. Lett. 124, 126401 (2020).
  22. L. Li, S. Z. Lu, J. Pan, Z. Qin, Y. Q. Wang, Y. Wang, G. Y. Cao, S. Du, and H. J. Gao, Buckled germanene formation on Pt (111), Adv. Mater. 26, 4820 (2014).
  23. M. E. Davila, L. Xian, S. Cahangirov, A. Rubio, and G. Le Lay, Germanene: A novel two-dimensional germanium allotrope akin to graphene and silicene, New J. Phys. 16, 095002 (2014).
  24. M. Derivaz, D. Dentel, R. Stephan, M. C. Hanf, A. Mehdaoui, P. Sonnet, and C. Pirri, Continuous germanene layer on Al (111), Nano Lett. 15, 2510 (2015).
  25. J. Gou, L. Kong, H. Li, Q. Zhong, W. Li, P. Cheng, L. Chen, and K. Wu, Strain-induced band engineering in monolayer stanene on Sb (111), Phys. Rev. Mater. 1, 054004 (2017).
  26. J. L. Deng, B. Y. Xia, X. C. Ma, H. Q. Chen, H. Shan, X. F. Zhai, B. Li, A. D. Zhao, Y. Xu, W. H. Duan, S.-C. Zhang, B. Wang, and J. G. Hou, Epitaxial growth of ultraflat stanene with topological band inversion, Nat. Mater. 17, 1081 (2018).
  27. J. Yuhara, B. He, N. Matsunami, M. Nakatake, and G. Le Lay, Graphene’s latest cousin: Plumbene epitaxial growth on a “nano WaterCube”, Adv. Mater. 31, 1901017 (2019).
  28. A. Fleurence, R. Friedlein, T. Ozaki, H. Kawai, Y. Wang, and Y. Yamada-Takamura, Experimental evidence for epitaxial silicene on diboride thin films, Phys. Rev. Lett. 108, 245501 (2012).
  29. D. Chiappe, E. Scalise, E. Cinquanta, C. Grazianetti, B. van den Broek, M. Fanciulli, M. Houssa, and A. Molle, Two-dimensional Si nanosheets with local hexagonal structure on a MoS2 surface, Adv. Mater. 26, 2096 (2014).
  30. L. Zhang, P. Bampoulis, A. N. Rudenko, Q. Yao, A. van Houselt, B. Poelsema, M. I. Katsnelson, and H. J. W. Zandvliet, Structural and electronic properties of germanene on MoS2, Phys. Rev. Lett. 116, 256804 (2016).
  31. L. Zhang, P. Bampoulis, A. van Houselt, and H. J. W. Zandvliet, Two-dimensional Dirac signature of germanene, Appl. Phys. Lett. 107, 111605 (2015).
  32. F. Zhu, W. Chen, Y. Xu, C. Gao, D. Guan, C. Liu, D. Qian, S. Zhang, and J. Jia, Epitaxial growth of two-dimensional stanene, Nat. Mater. 14, 1020 (2015).
  33. Y. Zang, T. Jiang, Y. Gong, Z. Guan, C. Liu, M. Liao, K. Zhu, Z. Li, L. Wang, W. Li, and C. Song, Realizing an epitaxial decorated stanene with an insulating bandgap, Adv. Funct. Mater. 28, 1802723 (2018).
  34. C. Z. Xu, Y. H. Chan, P. Chen, X. Wang, D. Flötotto, J. A. Hlevyack, G. Bian, S. K. Mo, M. Y. Chou, and T. C. Chiang, Gapped electronic structure of epitaxial stanene on InSb (111), Phys. Rev. B 97, 035122 (2018).
  35. B. Feng, H. Li, C. C. Liu, T. N. Shao, P. Cheng, Y. Yao, S. Meng, L. Chen, and K. Wu, Observation of Dirac cone warping and chirality effects in silicene, ACS Nano 7, 9049 (2013).
  36. P. Bampoulis, C. Castenmiller, D. J. Klaassen, J. van Mil, Y. Liu, C. C. Liu, Y. Yao, M. Ezawa, A. N. Rudenko, and H. J. Zandvliet, Quantum spin Hall states and topological phase transition in germanene, Phys. Rev. Lett. 130, 196401 (2023).
  37. Y. H. Wang, H. Steinberg, P. Jarillo-Herrero, and N. Gedik, Observation of Floquet–Bloch states on the surface of a topological insulator, Science 342, 453 (2013).
  38. J. W. McIver, B. Schulte, F.-U. Stein, T. Matsuyama, G. Jotzu, G. Meier, and A. Cavalleri, Light-induced anomalous Hall effect in graphene, Nat. Phys. 16, 38 (2020).
  39. S. Zhou, C. Bao, B. Fan, H. Zhou, Q. Gao, H. Zhong, T. Lin, H. Liu, P. Yu, P. Tang, and S. Meng, Pseudospin-selective Floquet band engineering in black phosphorus, Nature 614, 75 (2023).
  40. B. G. Streetman and S. Banerjee, Solid State Electronic Devices (Prentice Hall, New Jersey, 2000).
  41. J. P. Colinge, FinFETs and Other Multi-Gate Transistors (Springer, New York, 2008).
  42. S. M. Sze and K. K. Ng Kwok, Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981).
  43. Z. Ni, Q. Liu, K. Tang, J. Zheng, J. Zhou, R. Qin, Z. Gao, D. Yu, and J. Lu, Tunable bandgap in silicene and germanene, Nano Lett. 12, 113 (2012).
  44. M. Ezawa, Quantized conductance and field-effect topological quantum transistor in silicene nanoribbons, Appl. Phys. Lett. 102, 172103 (2013).
  45. W. F. Tsai, C. Y. Huang, T. R. Chang, H. Lin, H. T. Jeng, and A. Bansil, Gated silicene as a tunable source of nearly 100% spin-polarized electrons, Nat. Commun. 4, 1500 (2013).
  46. S. Kaneko, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, Theoretical performance estimation of silicene, germanene and graphene nanoribbon field-effect transistors under ballistic transport, Appl. Phys. Express 7, 035102 (2014).
  47. Y. Katayama, R. Yamauchi, Y. Yasutake, S. Fukatsu, and K. Ueno, Ambipolar transistor action of germanane electric double layer transistor, Appl. Phys. Lett. 115, 122101 (2019).
  48. J. Zheng, Y. Xiang, C. L. Li, R. Y. Yuan, F. Chi, and Y. Guo, All-optically controlled topological transistor based on Xenes, Phys. Rev. Appl. 14, 034027 (2020).
  49. J. Zheng, Y. Xiang, C. Li, R. Yuan, F. Chi, and Y. Guo, Multichannel depletion-type field-effect transistor based on ferromagnetic germanene, Phys. Rev. Appl. 16, 024046 (2021).
  50. Xiao-Long Lü, Gang Liu, Jia-En Yang, and Hang Xie, Field-effect transistor and giant magnetoresistance effect based on optically induced antichiral edge state in graphene, Appl. Phys. Lett. 124, 073103 (2024).
  51. L. Tao, E. Cinquanta, D. Chiappe, C. Grazianetti, M. Fanciulli, M. Dubey, A. Molle, and D. Akinwande, Silicene field-effect transistors operating at room temperature, Nat. Nanotech. 10, 227 (2015).
  52. C. L. Kane and E. J. Mele, Z2 topological order and the quantum spin Hall effect, Phys. Rev. Lett. 95, 146802 (2005).
  53. M. Ezawa, Valley-polarized metals and quantum anomalous Hall effect in silicene, Phys. Rev. Lett. 109, 055502 (2012).
  54. V. M. Pereira, A. H. Castro Neto, and N. M. R. Peres, Tight-binding approach to uniaxial strain in graphene, Phys. Rev. B 80, 045401 (2009).
  55. M. Farokhnezhad, M. Esmaeilzadeh, and K. Shakouri, Strain-modulated anisotropy of quantum transport properties in single-layer silicene: Spin and valley filtering, Phys. Rev. B 96, 205416 (2017).
  56. Y. Li, H. B. Zhu, G. Q. Wang, Y. Z. Peng, J. R. Xu, Z. H. Qian, R. Bai, G. H. Zhou, C. Yesilyurt, Z. B. Siu, and M. B. Jalil, Strain-controlled valley and spin separation in silicene heterojunctions, Phys. Rev. B 97, 085427 (2018).
  57. D. N. Liu and Y. Guo, Strain-tuned spin polarization and optical conductivity in MoS2/EuS heterostructures, Phys. Rev. B 107, 075430 (2023).
  58. C. C. Liu, H. Jiang, and Y. Yao, Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin, Phys. Rev. B 84, 195430 (2011).
  59. T. Oka and H. Aoki, Photovoltaic Hall effect in graphene, Phys. Rev. B 79, 081406 (2009).
  60. T. Kitagawa, T. Oka, A. Brataas, L. Fu, and E. Demler, Transport properties of nonequilibrium systems under the application of light: Photoinduced quantum Hall insulators without Landau levels, Phys. Rev. B 84, 235108 (2011).
  61. M. Ezawa, Photoinduced topological phase transition and a single Dirac-cone state in silicene, Phys. Rev. Lett. 110, 026603 (2013).
  62. Y. Meir and N. S. Wingreen, Landauer formula for the current through an interacting electron region, Phys. Rev. Lett. 68, 172512 (1992).
  63. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, New York, 1995).
  64. E. M. Hankiewicz, L. W. Molenkamp, T. Jungwirth, and J. Sinova, Manifestation of the spin Hall effect through charge-transport in the mesoscopic regime, Phys. Rev. B 70, 241301 (2004).
  65. W. Ren, Z. H. Qiao, J. Wang, Q. F. Sun, and H. Guo, Universal spin-Hall conductance fluctuations in two dimensions, Phys. Rev. Lett. 97, 066603 (2006).
  66. W. Long, Q. Sun, and J. Wang, Disorder-induced enhancement of transport through graphene p-n junctions, Phys. Rev. Lett. 101, 166806 (2008).
  67. H. Jiang, S. Cheng, Q. F. Sun, and X. C. Xie, Topological insulator: A new quantized spin Hall resistance robust to dephasing, Phys. Rev. Lett. 103, 036803 (2009).
  68. D. H. Lee and J. D. Joannopoulos, Simple scheme for surface-band calculations. I., Phys. Rev. B 23, 104988 (1981).
  69. D. H. Lee and J. D. Joannopoulos, Simple scheme for surface-band calculations. II. The Green’s function, Phys. Rev. B 23, 4997 (1981).
  70. S. J. Randolph, J. D. Fowlkes, and P. D. Rack, Focused, nanoscale electron-beam-induced deposition and etching, Crit. Rev. Solid State Mater. Sci. 31, 55 (2006).
  71. K. J. Kanarik, T. Lill, E. A. Hudson, S. Sriraman, S. Tan, J. Marks, V. Vahedi, and R. A. Gottscho, Overview of atomic layer etching in the semiconductor industry, J. Vac. Sci. Technol. A 33, 2 (2015).
  72. A. Fischer, A. Routzahn, S. M. George, and T. Lill, Thermal atomic layer etching: A review, J. Vac. Sci. Technol. A 39, 3 (2021).
  73. C. Zeng, H. Lu, D. Mao, Y. Du, H. Hua, W. Zhao, and J. Zhao, Graphene-empowered dynamic metasurfaces and metadevices, Opto-Electron. Adv. 5, 200098 (2022).

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Phys. Rev. Applied 24, 014058– Published 31 July, 2025
  • Received 2 December 2024
  • Revised 5 March 2025
  • Accepted 11 July 2025
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