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    Modeling of anisotropy effects in phosphorene devices

    Amirali Chalechale1,*, Roderick Melnik2, and Zoran L. Miškovic1

    • *Contact author: achalehc@uwaterloo.ca

    Phys. Rev. Applied 23, 064031 – Published 12 June, 2025

    DOI: https://doi.org/10.1103/y75r-txww

    Abstract

    In this paper, we present a model for the drift mobility tensor of a monolayer black phosphorus (phosphorene), encapsulated between two dielectrics. The model employs the energy-loss method to derive analytical expressions, accounting for pointlike charge-impurity distribution at various depths within the structure. Anisotropy, a critical factor in phosphorene-based devices, profoundly influences charge-transport properties by shaping the underlying device physics and behavior. Through the detailed analysis of various internal and external parameters, we reveal how anisotropy leads to significant differences in mobility between the armchair and zigzag directions. Both correlated and uncorrelated impurities are studied extensively and the current-voltage characteristics are derived, along with their sensitivity to the rotation angle of the phosphorene conducting channel. The longitudinal current density induced by the external electric field (along the x direction) is derived under two types of boundary conditions applied in the transverse direction in the channel corresponding to a zero electric field or a zero current in the y direction. This approach enables a thorough analysis of the effect of the misalignment angle of phosphorene. This work lays the foundation for the design and optimization of high-performance phosphorene-based nano- and optoelectronic devices by deepening the understanding of anisotropic charge transport.

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