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Real-time monitoring of growth of neon film for electron-on-neon qubits

Sidharth Duthaluru1, Kaiwen Zheng1, Erik A. Henriksen1, and Kater W. Murch1,2,3,*

  • *Contact author: katermurch@berkeley.edu

Phys. Rev. Applied 25, 044065 – Published 23 April, 2026

DOI: https://doi.org/10.1103/wjfs-cgwc

Abstract

Electron-on-neon (eNe) charge states coupled to superconducting circuits are a promising platform for quantum computing. Control over the formation of these charge states requires techniques to track and control the growth of solid Ne films on the circuit surface. We demonstrate a real-time Ne film-growth monitor using high-transition-temperature (high-Tc) YBCO microwave resonators. The high Tc enables tracking of the film thickness near Ne’s triple temperature and below. Across more than 300 solidification experiments, we find that the final Ne thickness varies stochastically from a few nanometers to a few microns for films solidified from the liquid phase. By increasing the driving power in the resonator, we consistently reduce the final thickness to below 100 nm. These results represent an important step toward controlled formation of Ne films for eNe qubits and highlight the broader utility of high-Tc resonators for hybrid quantum systems.

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