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Separation of bulk and surface contributions to the damping of permalloy on large-area chemical-vapor-deposited MoS2

Henry De Libero1, Evelyn Chalmers2, Noel Natera-Cordero2, Andrew Strudwick2, Ivan J. Vera-Marun3, and Thomas Thomson1,*

  • *Contact author: thomas.thomson@manchester.ac.uk
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Phys. Rev. Applied 25, 034014 – Published 4 March, 2026

DOI: https://doi.org/10.1103/wfsl-4mhb

Abstract

The ability to develop practical spintronic devices that use 2D van der Waals materials requires research on wafer-scale materials typically fabricated using chemical vapor deposition (CVD). In this report, we investigate spin pumping effects using ferromagnetic resonance spectroscopy (FMR) in wafer-scale transition-metal dichalcogenide–ferromagnetic (FM) heterostructures, specifically, MoS2-Ni0.8Fe0.2 bilayers with varying Ni0.8Fe0.2 thicknesses. The FMR measurements allow the phenomenological damping parameter α of the FM layer to be determined, with increased values often attributed to injection of spins across an interface through spin pumping. Our results on sputtered Ni0.8Fe0.2(t) films deposited on monolayer and bilayer CVD-grown MoS2 show a lower contribution to α from surface effects than a film of the same thickness deposited on SiO2. A reduction in surface damping is often attributed to a drop in spin pumping, but this work demonstrates that other interfacial effects such as spin-memory loss must also be considered in determining the physical origin of the measured damping parameter.

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Phys. Rev. Applied 25, 034014– Published 4 March, 2026
  • Received 11 July 2025
  • Revised 25 October 2025
  • Accepted 22 January 2026
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

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