The negatively charged tin-vacancy center in diamond (${\mathrm{Sn}\mathrm{V}}^{-}$) is an excellent solid-state qubit with optically addressable transitions and a long electron spin-coherence time at elevated temperatures (approximately 1.7 K). However, implementing scalable quantum nodes with high-fidelity optical readout of the electron spin state requires efficient photon emission and collection from the system. In this manuscript, we report a quantum photonic interface for ${\mathrm{Sn}\mathrm{V}}^{-}$ centers based on one-dimensional photonic crystal cavities fabricated in diamond thin films. Furthermore, we provide a rigorous description of the spontaneous emission dynamics of our system, taking into account individual contributions from both the C and D transitions of the emitter. This allows for the determination of Purcell factors per transition and, by extension, the C/D branching ratio ${\mathrm{Sn}\mathrm{V}}^{-}$ zero-phonon line. We observe quality factors of up to approximately 6000 across this sample, and we measure up to a 12-fold lifetime reduction, which translates into a Purcell factor of $F_{\mathrm{C}}=26.2\pm 1.5$ for a targeted C transition. By considering the cavity-mode polarization alignment with the C- and D-transition dipole moments, we validate the C/D branching ratio to be ${\eta }_{\mathrm{BR}}=0.75\pm 0.01$, in line with previous theoretical and experimental findings.

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• Cavity quantum electrodynamics
• Color centers
• Nanophotonics
• Optical quantum information processing
• Device fabrication
• Diamond
• Photonic crystals
• Thin films