Silicon carbide is a promising material platform for hosting various color centers that are suitable for quantum information processing. Here, we report the design and demonstration of an integrated electro-optic modulator that can directly interface silicon-vacancy centers in the 4H-silicon-carbide-on-insulator platform. Despite a relatively low electro-optic coefficient ($0.22$ pm/V), the optimized silicon carbide modulator is able to work in the 920-nm range with a propagation loss of less than $0.5$ dB/cm, featuring a 3-dB bandwidth of around 500 MHz, an extinction ratio of 8–12 dB for an operating peak-to-peak voltage of 10 V, and a footprint of less than $0.1{\mathrm{mm}}^2$. With such modulation performance, this approach described provides a cost-effective solution for the chip-scale implementation of the electro-optic modulation technology required for interfacing with color centers in the silicon carbide platform.

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• Color centers
• Electro-optic effects
• Integrated optics
• Optical quantum information processing
• Optoelectronics
• Quantum information architectures & platforms
• Devices
• Semiconductor compounds