Due to the comprehensive performance of the phase-change radio-frequency (rf) switch, it provides a promising idea for the next generation of alternative microwave switch. This work reports that the directly heated phase-change switches based on $\mathrm{Ge}\mathrm{Te}$/$\mathrm{Sb}$ superlatticelike (SLL) material have excellent switching and rf transmission performance. Compared to single-component phase-change materials, $\mathrm{Ge}\mathrm{Te}$/$\mathrm{Sb}$ SLL systems have lower thermal conductivity. As a functional layer of switching devices, the utilization rate of Joule heat can be improved, thus improving the switching speed of the device and reducing operating energy consumption. The contact area between the electrode and the phase-change material is reduced, and the switching structure is optimized to further improve the heating efficiency. The pulse width of the rf switch operating voltage is as low as 100 ns, with a total energy consumption of 758.5 nJ. It was found that the insertion loss of the phase-change switch unit is less than 0.76 dB, and the isolation is greater than 20.8 dB (0.1–67 GHz), respectively. Moreover, single-pole double-throw (SPDT) and single-pole four-throw (SP4T) phase-change rf switches can be fabricated by controlling the configuration between switching units. The present rf switches based on $\mathrm{Ge}\mathrm{Te}$/$\mathrm{Sb}$ SLL materials can be used in future wireless and 6G communication reconfiguration systems to switch between signal-processing modules to optimize signal quality and coverage.

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• Electronic structure
• Optoelectronics
• Resistive switching
• Devices
• Semiconductor compounds
• Superlattices
• Wireless communication networks
• Radio frequency techniques