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Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Victor Elhomsy1,*, Luca Planat1, David J. Niegemann1, Bruna Cardoso-Paz1, Ali Badreldin1, Bernhard Klemt1, Vivien Thiney1, Renan Lethiecq1, Eric Eyraud1 et al.

Matthieu C. Dartiailh1, Benoit Bertrand2, Heimanu Niebojewski2, Christopher Bäuerle1, Maud Vinet2, Tristan Meunier1, Nicolas Roch1, and Matias Urdampilleta1,†

  • *Contact author: elhomsy.victor@gmail.com
  • †Contact author: matias.urdampilleta@neel.cnrs.fr
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Phys. Rev. Applied 24, 064062 – Published 24 December, 2025

DOI: https://doi.org/10.1103/sj8d-x674

Abstract

Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistorlike devices eases future industrial-scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radio-frequency reflectometry only requires the already existing transistor gates to read a quantum dot state, which alleviates the need for additional elements. In this effort toward scalability, traveling-wave superconducting parametric amplifiers significantly enhance the readout signal-to-noise ratio (SNR) by reducing the noise below that of typical cryogenic low-noise amplifiers, while offering a broad amplification band, essential to multiplex the readout of multiple resonators. In this work, we demonstrate a 3-GHz gate-based reflectometry readout of electron charge states trapped in quantum dots formed in SiMOS multigate devices, with SNR enhanced due to a Josephson traveling-wave parametric amplifier (JTWPA). The broad tunable 2-GHz amplification bandwidth combined with more than 10-dB ON-OFF SNR improvement of the JTWPA enables frequency and time-division-multiplexed readout of interdot transitions, and noise performance consistent with JTWPA characteristics at higher frequencies. In addition, owing to a design without superconducting loops and with a metallic ground plane, the JTWPA is flux insensitive and shows stable performance up to a magnetic field of 1.1 T at the quantum dot device, compatible with standard SiMOS spin-qubit experiments.

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Phys. Rev. Applied 24, 064062– Published 24 December, 2025
  • Received 12 March 2025
  • Revised 13 August 2025
  • Accepted 28 August 2025
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