Blocking transition, commonly found in magnetic solids, is little known in polar solids. We report a blocking transition of ${\mathrm{Sr}\mathrm{Ti}\mathrm{O}}_3$ (STO) surface dipoles in STO-gated ${\mathrm{Mo}\mathrm{S}}_2$ field-effect transistors. With heating above room temperature, the ferroelectriclike counterclockwise hysteresis with gate voltage in the transistor’s conductance, due to the surface dipoles of STO, peaks near 350 K. On the other hand, its transconductance rises monotonically and its response time to gate voltage decreases. The peak in hysteresis occurs at the blocking temperature where the response time matches the gate-sweep time. The blocking is used to program the dipoles’ state by gate cooling for potential memory applications.

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• Electric polarization
• Ferroelectric phase transition
• Surface & interfacial phenomena
• Devices for digital logic, storage & processing
• Dielectrics
• Ferroelectrics
• Field-effect transistors
• Transition metal dichalcogenides