Driving and tailoring skyrmion dynamics via strain-mediated magnetoelectric coupling in multiferroic heterostructures
Phys. Rev. Applied 25, 044059 – Published 22 April, 2026
DOI: https://doi.org/10.1103/qyzd-mhy2
Abstract
Voltage-programmable transistor and diode operations are demonstrated within a single skyrmionic device structure via strain-mediated magnetoelectric coupling. On the basis of electromechanical and micromagnetic simulations, the spatial strain distributions are precisely tuned through gate voltages to achieve directional control and cutoff states of skyrmion motion. This mechanism allows both the operational modes and functional directionality to be programmed solely through electrical stimuli. The proposed approach eliminates Joule heating and achieves subfemtojoule energy consumption, effectively reducing device complexity by integrating multiple electronic functions into a single unit. These results highlight a promising route toward the development of ultralow-power, reconfigurable logic, and neuromorphic computing systems.
