Reconfigurable oxide nanoelectronics, enabled by conductive atomic force microscope (cAFM) lithography, have established complex oxide interfaces as a promising platform for quantum engineering that harnesses emergent phenomena for advanced functionalities. However, this cAFM nanofabrication process can occur only in air, with simultaneous device decay described under the “water-cycle” writing mechanism. These restrictions pose ongoing challenges for device optimization in the quantum regime at millikelvin temperatures. Here we demonstrate a “waterless” cAFM lithography approach that is compatible with vacuum and cryogenic environments. Through oxygen vacancy engineering at the ${\mathrm{La}\mathrm{Al}\mathrm{O}}_3/{\mathrm{Sr}\mathrm{Ti}\mathrm{O}}_3$ interface, we have achieved nonvolatile and reconfigurable cAFM control of nanoscale interfacial polaron-electron liquid transition at millikelvin temperatures with an ultrafine line resolution of 0.85 nm. Supported by first-principles calculations and drift-diffusion modeling, we show that tip-controlled oxygen vacancy electromigration plays a key role. This advancement bridges reconfigurable device fabrication and concurrent characterization in situ at millikelvin temperatures, and establishes a versatile Hubbard toolbox for engineering programmable quantum phases in correlated oxides.

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• Electronic materials
• Interfaces
• Nanowires
• Oxides
• Single-electron devices
• Strongly correlated systems
• Two-dimensional electron system
• Atomic force microscopy
• Lithography