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    Selective shuttling of electrons on helium using a CMOS control platform

    K. E. Castoria*, H. Byeon, N. R. Beysengulov, E. O. Glen, M. Sammon, J. Pollanen, D. G. Rees, and S. A. Lyon

    • EeroQ Corporation, Chicago, Illinois, 60651, USA

    • *Contact author: kcastoria@eeroq.com

    Phys. Rev. Applied 26, 014005 – Published 6 July, 2026

    DOI: https://doi.org/10.1103/pq6h-679f

    Abstract

    Electrons bound to the surface of liquid helium are an emerging quantum computing platform, offering the potential for highly mobile spin qubits that can be manipulated using complementary metal-oxide-semiconductor (CMOS)-fabricated devices. Here, as a step toward realizing this technology, we demonstrate selective two-dimensional shuttling of electrons across a helium film condensed on the surface of a CMOS control chip. The electrons are moved in packets containing, on average, several tens down to single electrons. We perform CCD-style electron shuttling in any of 128 transport microchannels, each of which links electron storage zones and sensing zones in the two-dimensional plane. This shuttling “unit cell” is repeated 32 times across the chip, allowing packet sensing to be performed in parallel. Despite the resulting gain in sensitivity, we find no evidence of electron loss after repeating shuttling sequences at least 109 times. The device serves as a prototype quantum information processing platform that is readily scalable to control large monolithically integrated arrays of electron spins.

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