Two-dimensional (2D) materials, with their atomic-scale thickness and high carrier mobility, are promising candidates for replacing silicon channels, offering significant potential for gate lengths below 5 nm. Monolayer $MN$$\mathrm{H}$${}_2$ ($MN$ = $\mathrm{CSi},\mathrm{Si}\mathrm{Si},\mathrm{Si}\mathrm{Ge}$) materials, such as ${\mathrm{CSi}\mathrm{H}}_2$, ${\mathrm{Si}}_2{\mathrm{H}}_2$, and ${\mathrm{Si}\mathrm{Ge}\mathrm{H}}_2$, exhibit suitable band gaps alongside excellent carrier mobility. Their high compatibility with existing silicon-based chip technologies further positions them as suitable channel materials for 2D field-effect transistors (FETs). Using first-principles calculations, we systematically investigate the transport properties of monolayer $MN$$\mathrm{H}$${}_2$ metal-oxide-semiconductor field-effect transistors (MOSFETs) and benchmark their performance against the International Technology Roadmap for Semiconductors (ITRS) 2028 requirements for high-performance (HP) and low-power applications. These MOSFETs achieve peak on-state currents ($I_{\mathrm{ON}}$) of 4157 and 3527 $\text{μ}\mathrm{A}/\text{μ}\mathrm{m}$ for $n$- and $p$-type HP devices, respectively, with notably low delay times $\tau$ and power dissipation (PDP). They maintain compliance with ITRS 2028 standards when scaled to gate lengths as small as 3 nm. When scaled to 5 nm, the subthreshold swing reaches 58 mV/dec, surpassing the Boltzmann thermal limit of 60 mV/dec. Compared to other 2D materials, $MN$$\mathrm{H}$${}_2$ MOSFETs deliver higher $I_{\mathrm{ON}}$, lower $\tau$, and reduced PDP, establishing them as highly promising candidates for next-generation 2D FET applications.

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• Ballistic transport
• Electrical properties
• 2-dimensional systems
• MOSFET
• Monolayer films
• Semiconductor compounds
• First-principles calculations