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    Ultrafast carrier separation and suppressed recombination in ferroelectric CuInP2S6/SiC van der Waals heterostructures

    Shangyong Yu, Yanqi Wang, Mengyan Zhang, Shuhong Ma*, and Zhaoyong Jiao†

    • *Contact author: mash.phy@htu.edu.cn
    • †Contact author: zhy_jiao@htu.cn

    Phys. Rev. Applied 24, 034084 – Published 30 September, 2025

    DOI: https://doi.org/10.1103/pcb9-qwqk

    Abstract

    Integration of two-dimensional (2D) ferroelectric materials into van der Waals (vdW) heterostructures offers a promising strategy for enhancing photocatalytic efficiency. Herein, we reveal the electronic structures and photoexcited carrier dynamics in CuInP2S6/SiC heterostructures, using first-principles and nonadiabatic molecular dynamics simulations. Both the down- and up-polarization configurations exhibit a type-II charge-separation mechanism with ultrafast electron (hole) transfer within about 58 fs (110 fs), accompanied by long carrier lifetime scales of several nanoseconds. Notably, switching CuInP2S6 ferroelectric polarization from up to down exhibits a low polarization-reversal energy barrier (0.32 eV) and reduces nonadiabatic coupling in the recombination process, due to weakened electron-phonon coupling and accelerated quantum decoherence, thereby suppressing electron-hole recombination and prolonging its lifetime from 1.04 to 3.44 ns. These findings demonstrate that CuInP2S6/SiC has great promise for photocatalysis using 2D ferroelectric vdW heterostructures.

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