Efficient manipulation of perpendicular magnetic tunnel junctions is essential for the development of high-density and low-power spintronic devices. However, the general requirement for an external magnetic field restricts the application of emerging spin-orbit torque technologies that utilize the in-plane polarized spin current. In this work, we demonstrate an all-electrical method for manipulating perpendicular magnetic memory via tilted spin polarization. This unconventional spin current is generated by a ${\mathrm{Ru}\mathrm{O}}_2(101)$ writing channel, especially when the charge current flows along the [010] axis. The tunneling magnetoresistance ratio reaches 60%, and the critical switching current density is below 1 × ${10}^7$ A/${\mathrm{cm}}^2$. Field-free magnetization switching is further confirmed through anomalous Hall effect and magneto-optical Kerr effect measurements on Hall bar devices. These findings should advance the application of unconventional spin currents and shed light on high-density and low-power magnetic memories.

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• Magnetization switching
• Spin polarization
• Spin-orbit coupling
• Spin-orbit torque
• Tunneling magnetoresistance
• Devices for digital logic, storage & processing
• Magnetic tunnel junctions
• Ferromagnetic resonance