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    Enhanced superconducting-vortex diode effect in a superconductor/antiferromagnet heterostructure

    Xinyi Zheng1,2,*, Ruihuan Duan3,*, Desheng Wu4,5,*, Xilin Feng6, Xue Yang1,2, Lihong Hu1,2, Lei Xu1,2, Sicheng Zhou1,2, Siyuan Zhou1,2 et al.

    Ximing Zhang1,2, Bingbing Tong1,7, Ziwei Dou1,2,7, Zhaozheng Lyu1,2,7, Xiaohui Song1,2,7, Peiling Li1,2,7,†, Jie Shen1,2,7, Jianlin Luo1,2,7, Xiunian Jing1,2,7, Fanming Qu1,2,7, Zheng Liu3,8, Kam Tuen Law6, Guangtong Liu1,2,7,‡, and Li Lu1,2,7

    • *These authors contributed equally to this work.
    • †Contact author: cioran@iphy.ac.cn
    • ‡Contact author: gtliu@iphy.ac.cn

    Phys. Rev. Applied 25, 034032 – Published 10 March, 2026

    DOI: https://doi.org/10.1103/mksg-lj91

    Abstract

    Superconducting diodes, characterized by unidirectional flow of supercurrents, are promising components for low-power quantum circuits. In this work, we demonstrate a field-controlled superconducting rectifier in a van der Waals heterostructure comprising an Ising superconductor NbSe2 and an antiferromagnetic insulator MnPS3. Our devices display key features of a superconducting-vortex-diode effect, including a characteristic M-shaped dependence of the critical current Ic on out-of-plane magnetic fields Bz, and an antisymmetric diode efficiency η with respect to Bz. The second-harmonic magnetotransport measurements confirm that the observed nonreciprocity originates from the strongly asymmetric vortex dynamics, which are significantly enhanced compared to pristine few-layer NbSe2. We attribute the enhancement to an inversion symmetry breaking induced by the spatially distributed superconducting domains due to the inhomogeneous magnetic proximity effect. Our findings bring insights for developing superconducting-vortex diodes that do not rely on artificial edge or surface disorder to achieve asymmetric barriers for vortex motion.

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