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    Enhancing thermal stability and spin-orbit-torque efficiency of Pt through Ti doping

    Tianle Sui1, Dingsong Jiang2, Yiming Yang1, Hetian Chen1, Chao Li1, Sirui Lu2, Jingchun Liu1, Guiping Ji2, Xingyu Yan1 et al.

    Zenghui Jin1, Yahong Chai2, Di Yi1,*, and Tianxiang Nan2,†

    • 1School of Materials Science and Engineering, Tsinghua University, Beijing, China
    • 2School of Integrated Circuit and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China

    • *Contact author: diyi@mail.tsinghua.edu.cn
    • †Contact author: nantianxiang@mail.tsinghua.edu.cn

    Phys. Rev. Applied 25, 054008 – Published 4 May, 2026

    DOI: https://doi.org/10.1103/lvxh-1jb5

    Abstract

    Platinum (Pt) is one of the most promising spin-source materials for spin-orbit-torque (SOT) devices owing to its high spin Hall ratio and low resistivity. However, the high-temperature thermal processing required during fabrication of magnetic tunnel junctions causes Pt to agglomerate, degrading interface quality and thereby compromising SOT efficiency. In this work, we demonstrate that titanium (Ti) doping simultaneously enhances the spin Hall ratio of Pt and preserves its performance after high-temperature annealing. Systematic spin-torque ferromagnetic resonance and spin Hall magnetoresistance measurements reveal that the optimally Ti-doped alloy achieves 30% enhancement in spin Hall ratio while maintaining its performance after annealing even at 400 °C. In contrast, pure Pt experiences a 77% reduction in efficiency due to the loss of interfacial spin transparency. Structural characterization further indicates that Ti doping kinetically suppresses Pt atomic diffusion and thermodynamically stabilizes the interface, preventing agglomeration-induced roughening. These findings establish PtTi alloys as thermally stable spin-source materials for energy-efficient SOT-magnetoresistive random-access memory applications.

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