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Parasitic two-level systems in merged-element transmon qubits

Etienne Daum*, Benedikt Berlitz, Steffen Deck, Alexey V. Ustinov, and Jürgen Lisenfeld†

  • *Contact author: etienne.daum@kit.edu
  • †Contact author: juergen.lisenfeld@kit.edu
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Phys. Rev. Applied 26, 054007 – Published 3 November, 2026

DOI: https://doi.org/10.1103/g3nf-fp61

Abstract

In conventional transmon qubits, decoherence is dominated by a large number of parasitic two-level systems (TLS) residing at the edges of the large area coplanar shunt capacitor and junction leads. Avoiding these defects by improvements in design, fabrication, and materials proved to be a significant challenge that so far led to limited progress. The merged-element transmon qubit (“mergemon”), a recently proposed paradigm shift in transmon design, attempts to address these issues by engineering the Josephson junction to act as its own shunt capacitor. With its energy mostly confined within the junctions, efforts required to improve qubit coherence can be concentrated on the junction barrier, a potentially easier to control interface compared with exposed circuit areas. Incorporating an additional aluminum deposition and oxidation into the in situ bandaged Niemeyer-Dolan technique, we were able to fabricate flux-tunable mergemon qubits achieving mean T1 relaxation times of up to 130  μs (Q≈3.3×106). TLS spectroscopy under applied strain and electric fields, together with systematic design variations, revealed that even for mergemon qubits—despite their significantly reduced footprint and increased junction barrier volume—careful design considerations are still essential to avoid T1 limitations due to surface loss.

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Outline

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Phys. Rev. Applied 26, 054007– Published 3 November, 2026
  • Received 26 January 2026
  • Revised 17 June 2026
  • Accepted 6 October 2026
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