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Charge-to-spin conversion in atomically thin bismuth

Wilson J. Yánez-Parreño1, Alexander Vera2,3, Sandra Santhosh1, Chengye Dong4,5, Jimmy C. Kotsakidis6, Yongxi Ou1, Saurav Islam1, Adam L. Friedman6, Maxwell Wetherington7 et al.

Joshua Robinson1,2,3 and Nitin Samarth1,2,3,*

  • *Contact author: nsamarth@psu.edu

Phys. Rev. Applied 23, L061001 – Published 9 June, 2025

DOI: https://doi.org/10.1103/fwrg-3dr2

Abstract

We report charge-to-spin conversion in a hybrid heterostructure comprised of atomically thin bismuth (Bi) confined between a silicon carbide (SiC) substrate and epitaxial graphene (EG). We confirm the composition, the dimensionality, and a 96.5% intercalation coverage using x-ray photoelectron spectroscopy, scanning transmission microscopy, low-energy electron diffraction, and Raman spectroscopy. Electrical transport measurements show signs of weak antilocalization in the heterostructure. Spin-torque ferromagnetic resonance measurements in Permalloy/EG/2D-Bi heterostructures probe charge-to-spin conversion, revealing an in-plane polarization of the spin current, perpendicular to the charge current. The ratio of the in-plane to out-of-plane torque is 3.75 times higher than in hydrogenated graphene control samples.

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