Sub-5-nm 7-armchair hydrogened graphene nanoribbon transistors: More symmetric <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi>n</mi></math>- and <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi>p</mi></math>-type performance for homogeneous CMOS applications

Linqiang Xu; Shiqi Liu; Qiuhui Li; Ying Li; Shibo Fang; Ying Guo; Yee Sin Ang; Chen Yang; Jing Lu

doi:10.1103/f63w-s35v

Sub-5-nm 7-armchair hydrogened graphene nanoribbon transistors: More symmetric $n$ - and $p$ -type performance for homogeneous CMOS applications

Linqiang Xu ^1,2,*, Shiqi Liu^3,*, Qiuhui Li², Ying Li ², Shibo Fang ², Ying Guo⁴, Yee Sin Ang ^5,†, Chen Yang^2,‡, and Jing Lu^2,6,7,8,9,§

¹College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou, Fujian 362000, People’s Republic of China
²State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People’s Republic of China
³State Key Laboratory of Spintronic Devices and Technologies, Hangzhou 311305, People’s Republic of China
⁴School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong, 723001, People’s Republic of China
⁵Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
⁶Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
⁷Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, China
⁸Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, China
⁹Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China

^*These authors contributed equally to this work.
^†Contact author: yeesin_ang@sutd.edu.sg
^‡Contact author: yangchen96@pku.edu.cn
^§Contact author: jinglu@pku.edu.cn

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Phys. Rev. Applied 26, 034007 – Published 2 September, 2026

DOI: https://doi.org/10.1103/f63w-s35v

Abstract

Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable band gap (0–3 eV), ultrahigh carrier mobility (up to $4600 {cm}^{2} V^{- 1} s^{- 1}$ ), and excellent device performance (current on-off ratio of $10^{7}$ ). However, the asymmetry of reported $n$ -type and $p$ -type GNR field-effect transistors (FETs) at ultrashort gate length $(L_{g})$ has become an obstacle to future complementary metal-oxide-semiconductor (CMOS) integration. Here, we conduct ab initio quantum transport simulations to investigate the transport properties of sub-5-nm $L_{g}$ 7-armchair-edge hydrogened GNR (7 AGNRH) FETs. The on-state current, delay time, and power dissipation of the $n$ -type and $p$ -type 7 AGNRH FETs fulfill the International Technology Roadmap for Semiconductors targets for high-performance devices when $L_{g}$ is reduced to 3 nm. Remarkably, the 7 AGNRH FETs exhibit superior $n$ -type and $p$ -type symmetry to the 7-9-7 AGNRH FETs due to the more symmetrical electron and hole effective masses. Compared with the monolayer ${MoS}_{2}$ and ${MoTe}_{2}$ counterparts, the 7 AGNRH FETs have better device performance, which could be further improved via gate engineering. Our results shed light on the immense potential of 7 AGNRH in advancing CMOS electronics beyond silicon.

Physical Review Applied

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Sub-5-nm 7-armchair hydrogened graphene nanoribbon transistors: More symmetric $n$ - and $p$ -type performance for homogeneous CMOS applications