Voltage-controlled electronic spin manipulation and detection in nanographene
Phys. Rev. Applied 26, 014026 – Published 8 July, 2026
DOI: https://doi.org/10.1103/d1b6-4d6n
Abstract
Voltage-controlled spin manipulation at the atomic scale is a central challenge for realizing all-electrical spintronic devices. Here, we present real-time simulations demonstrating a voltage-driven spin memory effect in a nanographene junction. Using the mean-field Hubbard approximation in combination with time-dependent nonequilibrium Green’s function method, we show that antisymmetric electrode coupling enables deterministic switching between spin-polarized states solely by direct current voltage. Positive and negative voltage pulses drive transitions between two bistable spin configurations, while spin-resolved tunneling currents provide distinct and robust electrical readout signals. The system exhibits a pronounced hysteresis in polarization under cyclic bias, forming a controllable memory loop. These results establish a microscopic mechanism for voltage-induced spin manipulation and pave the way for the design of all-electrical spintronic memory architecture.
