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    Thin-film lithium niobate on diamond as a platform for efficient spin-phonon coupling

    Zhujing Xu1,*, Sophie Weiyi Ding1,2, Eliza Cornell1, Salma Mohideen1,3, Matthew Yeh1, Kazuhiro Kuruma1,4, Leticia Magalhaes1, Amirhassan Shams-Ansari1,5, Benjamin Pingault6,7,8 et al.

    Marko Lončar1,†

    • *Contact author: zxu2@g.harvard.edu
    • †Contact author: loncar@g.harvard.edu

    Phys. Rev. Applied 25, 014025 – Published 12 January, 2026

    DOI: https://doi.org/10.1103/cpgp-9jpx

    Abstract

    Negatively charged silicon vacancy (SiV−) centers in diamond are leading candidates for solid-state quantum memory that can be controlled using electromagnetic or acoustic waves. The latter are particularly promising due to the strong strain response of SiV−, enabling large spin-phonon interaction strengths. Indeed, coherent spin control via surface acoustic waves (SAWs) has been demonstrated and is essential for developing on-chip phononic quantum networks. However, the absence of piezoelectricity in diamond requires an interface with a piezoelectric material for efficient transduction and delivery of acoustic waves to spins in diamonds. Here, we demonstrate a heterogeneously integrated phononic platform that combines thin-film lithium niobate with diamond to enable acoustic control of single SiV− spins. Additionally, leveraging large SAW-induced strain at the location of SiV−, we achieve coherent acoustic control of an electron spin with more than twofold improvement in Rabi frequency compared to state-of-the-art devices based on aluminum nitride on diamond. This work represents a crucial step towards realizing phonon-based quantum information processing systems.

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