Decoders, which function as the “precision translators” in digital systems, have traditionally required external memory to integrate storage and computation, leading to high circuit complexity and component counts. This work presents a novel nonvolatile decoding mechanism that exploits the ferroelectric polarization reversal and electron transport anisotropy of two-dimensional materials. Based on a $\text{GaTe}/{\text{In}}_2{\text{Se}}_3$ two-dimensional van der Waals heterostructure, we designed a four-terminal, dual-channel ferroelectric tunnel junction. First-principles calculations demonstrate that the device can be stabilized into four distinct resistance states through the synergistic control of polarization direction and charge transport path, thereby fully enabling the binary decoding of “00”, “01”, “10”, and “11”. This design integrates combinational logic and memory within a single ferroelectric device, which not only minimizes data movement but also enhances storage density, offering a promising pathway for designing low-power, high-density integrated circuits in the post-Moore era.

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• Devices for digital logic, storage & processing
• Electronic structure
• 2-dimensional systems
• Ferroelectric tunnel junctions
• Semiconductor compounds
• van der Waals systems
• Density functional theory
• Nonequilibrium Green's function