Pulsed electroluminescence in a dopant-free gateable semiconductor
Phys. Rev. Applied 23, 064047 – Published 20 June, 2025
DOI: https://doi.org/10.1103/bj8d-kclm
Abstract
We report on a stable form of pulsed electroluminescence in a dopant-free direct band gap semiconductor heterostructure that we coin the “tidal effect.” Swapping of an inducing gate voltage in an ambipolar field effect transistor allows incoming and outgoing carriers of opposite charge to meet and recombine radiatively. We develop a model to explain the carrier dynamics that underpins the frequency response of the pulsed electroluminescence intensity. Higher mobilities enable larger active emission areas than in previous reports, as well as stable emission over long timescales.
