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  • Letter

Magnetic-Tunnel-Junction-Based True Random-Number Generator with Enhanced Generation Rate

Xiheng Chen1, Jiabin Zhang1, and Jiang Xiao (萧江)1,2,3,4,5,*

  • 1Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
  • 2Shanghai Qi Zhi Institute, Shanghai 200232, China
  • 3Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
  • 4Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
  • 5Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China

  • *xiaojiang@fudan.edu.cn
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Phys. Rev. Applied 18, L021002 – Published 24 August, 2022

DOI: https://doi.org/10.1103/PhysRevApplied.18.L021002

Abstract

A magnetic tunnel junction (MTJ) is a bistable magnetic device and typically used as magnetic random access memory. When the potential barrier separating the two bistable states is reduced, such a device can also be used as a true random-number generator (TRNG). Here we show that a millitesla magnetic field transverse to the magnetization equilibrium direction can effectively control the potential barrier in an MTJ-based TRNG, and realize a random-number generation rate up to gigahertz, several orders of magnitude higher than the existing MTJ-based devices. Furthermore, such field-modulating MTJ-TRNG can also function as a probabilistic bit with tunable activation time for the purpose of probabilistic computing.

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Phys. Rev. Applied 18, L021002– Published 24 August, 2022
  • Received 4 May 2022
  • Accepted 24 June 2022
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