The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation nonvolatile memory (NVM) due to their superior electrical properties. Organic and inorganic materials each offer distinct advantages for resistive-switching performance, while hybrid materials such as metal-organic frameworks (MOFs) combine the strengths of both. In this study, we present a resistive random-access memory (ReRAM) device using zeolitic imidazolate framework (ZIF-8), an MOF material, as the resistive-switching layer. The ZIF-8 film is synthesized via a simple solution process method at room temperature and subsequently characterized. The $\mathrm{Al}$/ZIF-8/ITO device demonstrates bipolar resistive-switching behavior with an on-off resistance ratio of approximately ${10}^2$, stable retention up to ${10}^4$ s, and consistent performance across 60 cycles while exhibiting robust thermal stability from $-20{}^{\circ }\mathrm{C}$ to $100{}^{\circ }\mathrm{C}$. Low-frequency noise and impedance spectroscopy measurements suggest a filamentary switching mechanism. Additionally, the memory state can be tuned by adjusting the reset voltage, pointing to its potential as multilevel memory. Potentiation and depression experiments further highlight the device’s promise for neuromorphic applications. With high stability, tunability, and strong performance, ZIF-8 based ReRAM shows great promise for advanced NVM and neuromorphic computing applications.

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• Impedance
• Ionic conductivity
• Resistive switching
• Devices for digital logic, storage & processing
• Memristors
• Metal-organic framework
• Zeolites
• Noise measurements