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Quasiballistic (In,Ga)As Josephson field-effect transistor with molybdenum electrodes

Louise Olausson1,2,* and Erik Lind1,2

  • *Contact author: louise.olausson@eit.lth.se
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Phys. Rev. Applied 25, 044066 – Published 23 April, 2026

DOI: https://doi.org/10.1103/8n63-zfnr

Abstract

Gate-tunable Josephson junctions with molybdenum superconducting contacts are reported. The Josephson field-effect transistors are based on an (In,Ga)As quantum well heterostructure with Mo contacts deposited on a layer of heavily doped (In,Ga)As by HCl cleaning and sputtering. We reproduced the measured data using a quasiballistic model that captures the gate dependence of the critical current and considers contributions from both Andreev states in the discrete spectrum and leaky states in the continuous spectrum. We report the observation of multiple Andreev reflections (MARs) up to the fourth order, and the measured temperature dependence of the MAR features is consistent with a model describing an effective induced superconducting gap beneath the contacts, approximately 55% of the gap in the Mo. The transistors are integrated into an rf-compatible geometry with Si3N4 spacers, enabling future implementation of highly scaled, compact, quantum-limited cryogenic amplifiers.

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Phys. Rev. Applied 25, 044066– Published 23 April, 2026
  • Received 30 July 2025
  • Revised 3 November 2025
  • Accepted 13 March 2026
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. Funded by Bibsam.

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