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    Direct dispersive signature of Pauli spin blockade with voltage bias

    Simon Svab1,*, Rafael S. Eggli1,†, Taras Patlatiuk1, Miguel J. Carballido1, Pierre Chevalier Kwon1, Dominique A. Trüssel1, Ang Li2, Erik P.A.M. Bakkers2, Andreas V. Kuhlmann1 et al.

    Dominik M. Zumbühl1,‡

    • 1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
    • 2Department of Applied Physics, TU Eindhoven, Den Dolech 2, 5612 AZ, Eindhoven, The Netherlands

    • *Contact author: simon.svab@unibas.ch
    • †This author contributed equally to this work as the first author.
    • ‡Contact author: dominik.zumbuhl@unibas.ch

    Phys. Rev. Applied 25, 024082 – Published 26 February, 2026

    DOI: https://doi.org/10.1103/8jmt-m432

    Abstract

    Pauli spin blockade (PSB) is a key paradigm in semiconductor nanostructures that gives access to the spin physics. We report the direct observation of PSB using gate-dispersive reflectometry on double quantum dots in the presence of a finite source-drain bias voltage. The reservoir charge transitions are strongly modulated, turning on and off when entering and leaving the blockaded region, consistent with a simple model. Observed in hole double quantum dots in a Ge/Si core/shell nanowire and a Si fin field-effect transistor, the effects are enhanced at larger bias voltage and suppressed by a magnetic field. This work establishes the fundamental dispersive signature of PSB under bias as an emerging tool for probing quantum dot devices.

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