Direct dispersive signature of Pauli spin blockade with voltage bias
Phys. Rev. Applied 25, 024082 – Published 26 February, 2026
DOI: https://doi.org/10.1103/8jmt-m432
Abstract
Pauli spin blockade (PSB) is a key paradigm in semiconductor nanostructures that gives access to the spin physics. We report the direct observation of PSB using gate-dispersive reflectometry on double quantum dots in the presence of a finite source-drain bias voltage. The reservoir charge transitions are strongly modulated, turning on and off when entering and leaving the blockaded region, consistent with a simple model. Observed in hole double quantum dots in a / core/shell nanowire and a fin field-effect transistor, the effects are enhanced at larger bias voltage and suppressed by a magnetic field. This work establishes the fundamental dispersive signature of PSB under bias as an emerging tool for probing quantum dot devices.